Output, transistors fabricated with the base diffusion of the NPN transistors. Vertical PNP transistors, with high gain. High performance vertical PNP transistors are seldom offered on, , low temperature coefficient and ease of trim. Biasing Schottky diodes, large-value base resistors and Lateral Output PNP transistors are not found on other chips. Text: clamping purposes, high value base resistors which are less troublesome to use than implant resistors, high, over temperature. Text: 0.1 50 C1R 2N5089 CMPT5401 PNP HIGH VOLT 150 600 60 240 10 100 C2L 2N5401 CMPT5551 NPN HIGH VOLT 160, NPN HIGH VOLT 300 500 40 30 50 C1D MPSA42 CMPTA56 PNP HIGH CURRENT 80 500 50 100 50 C2G MPSA56, MPSA64 CMPTA92 PNP HIGH VOLT 300 500 25 30 50 C2D MPSA92 SILICON TRANSISTORS, S OT-89 I :ase, PD, CXTA64 PNP DARLINGTON 30* 500 20k 100 125 CXTA64 MPSA64 CXTA92 PNP HIGH VOLT 300 500 25 30 50 CXTA92, 300 20 250 CXT3906 2N3906 CXT4033 PNP HIGH CURR100 300 100 100 CXT4033 2N4033 CXTA14 NPNĭDQD43D OT-23, OT-89 OT-23 CMPT918 2N918 CMPT2222A CXT390A CXT3904 2N3904 marking code ff SMD Transistor SMD MARKING CODE C2U SMD MARKING CODE C1G C2U SOT-89 transistor smd 2N4403 c1g smd 2N3904 TRANSISTOR SMD SOT23 transistor 2N2222A RF transistor marking IN SOT-89 2N3640Ībstract: 7S1 zener diode transistor C 4231 EM-83 ic for hearing aid operational amplifier discrete schematic pnp darlington array EM-21 DARLINGTON ARRAYS Darlington Independent Power Module N-P-N AND P-N-PĪbstract: SMD MARKING CODE C2U SMD MARKING CODE C1G C2U SOT-89 transistor smd 2N4403 c1g smd 2N3904 TRANSISTOR SMD SOT23 transistor 2N2222A RF transistor marking IN SOT-89 2N3640 Excessive voltage (bias, resulting high temperatures may permanently dam age the semiconductor device. Current in the reverse-bias region is usually much lower. Thus, if an emitter-tobase voltage change of 0.1 volt, divider causes a voltage drop across resistor R 2 which biases the emitter with respect to the base, and is quite high. In a p-n-p transistor, the emit ter is made positive with, remain 15 RCA TRANSISTOR MANUAL unchanged. ⢠Large 200 mA transistors, 6 mA PNP transistors and Schottky diodes are availableĨ00MHz) schematic diagram 48 volt UPS 12 volt zener diode on pspice 74 Series IC Manual TM3J pnp npn dual emitter connected 750 ohm resistor pnp high emitter base voltage 15 volt design manual transistor schottky model spice 7.5 volt zener diode on pspiceĪbstract: rca case outlines diode 1N539 2N301 2N140 transistor bf 175 rca thyristor manual drift-field 2N1637 transistor rca 2n173 NPN, 24mA (8mA per emitter ) The base emitter junction of the NPN transistor makes an excellent 5.9 volt, ) 1(0.1A) 9(0.2A) 8(0.1 A) Large PNP Transistors 1 0 5 0 Base Resistance 310k 93k 1.8M 610k Pads 22, possible matching. If the minimum voltage drop is not set properly, the NPN will have a small baseĪND8028/D NCP100 r14525 MBT3904 datasheet MBT3904 1 microfarad capacitor SOT23 MBT3904 MBT35200 MBT35200MT1 MRA4003T3 NCP100 TL431 TLV431Ībstract: 12 volt zener diode on pspice 74 Series IC Manual TM3J pnp npn dual emitter connected 750 ohm resistor pnp high emitter base voltage 15 volt design manual transistor schottky model spice 7.5 volt zener diode on pspice There is a voltage differential issue with driving the base of a NPN, 0.6 to 0.7, minimum voltage drop. For the PNP the minimum voltage drop from input to output is the saturation voltage of emitter, saturation voltage of 0.31 volts, typical DC current gain of 200, and maximum emitter to base voltage of, for this purpose. Text: minimum is the greater of the saturation voltage from collector to emitter or the base to emitter on voltage. Pnp high emitter base voltage 15 volt Datasheets Context Search Catalog DatasheetĪbstract: MBT3904 1 microfarad capacitor SOT23 MBT3904 MBT35200 MBT35200MT1 MRA4003T3 NCP100 TL431 TLV431
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